METHOD FOR CONDUCTIVITY CONTROL OF (AL,IN,GA,B)N

摘要

A method of controlled p-type conductivity in (Al, In, Ga, B)N semiconductor crystals. Examples include { 1011 } GaN films deposited on {100} MgAl₂O₄ spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.