发明名称 |
SEMICONDUCTOR DEVICE HAVING ISLAND REGION |
摘要 |
A semiconductor device includes a semiconductor substrate which includes an active region defined by an isolation film, and a source region and a drain region defined in the active region and spaced apart from each other in the active region. The source region and the drain region each have a first conductivity type. The semiconductor device further includes an island region defined in the active region between the source region and the drain region. The island region has the first conductivity type.
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申请公布号 |
US2008224203(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080049612 |
申请日期 |
2008.03.17 |
申请人 |
KIM JIN-SUNG;PARK SUNG-BAE |
发明人 |
KIM JIN-SUNG;PARK SUNG-BAE |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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