发明名称 SEMICONDUCTOR DEVICE HAVING ISLAND REGION
摘要 A semiconductor device includes a semiconductor substrate which includes an active region defined by an isolation film, and a source region and a drain region defined in the active region and spaced apart from each other in the active region. The source region and the drain region each have a first conductivity type. The semiconductor device further includes an island region defined in the active region between the source region and the drain region. The island region has the first conductivity type.
申请公布号 US2008224203(A1) 申请公布日期 2008.09.18
申请号 US20080049612 申请日期 2008.03.17
申请人 KIM JIN-SUNG;PARK SUNG-BAE 发明人 KIM JIN-SUNG;PARK SUNG-BAE
分类号 H01L29/78 主分类号 H01L29/78
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