| 发明名称 |
SYSTEMS AND METHODS FOR FORMING TANTALUM OXIDE LAYERS AND TANTALUM PRECURSOR COMPOUNDS |
| 摘要 |
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
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| 申请公布号 |
US2008227303(A1) |
申请公布日期 |
2008.09.18 |
| 申请号 |
US20080106510 |
申请日期 |
2008.04.21 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A.;QUICK TIMOTHY A. |
| 分类号 |
H01L21/285;C01G35/00;C07F9/00;C23C16/06;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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