| 发明名称 |
METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES |
| 摘要 |
A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.
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| 申请公布号 |
US2008224236(A1) |
申请公布日期 |
2008.09.18 |
| 申请号 |
US20080020815 |
申请日期 |
2008.01.28 |
| 申请人 |
NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
REN CHI;YU HONGYU;CHAN SIU HUNG DANIEL;LI MING-FU;KWONG DIM-LEE |
| 分类号 |
H01L29/78;H01L21/28;H01L21/8238;H01L29/49;H01L29/76 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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