| 摘要 |
An image sensor with sufficient photoelectric conversion capacity and enhanced reliability and a method of fabricating the same, in which the image sensor includes a bare substrate; an epitaxial layer disposed on the bare substrate and including a first impurity distribution region of a first conductivity type, which is formed on the bare substrate, and a second impurity distribution region of a second conductivity type, which is formed on the first impurity distribution region; and a charge collection well formed within the epitaxial layer and at least partially doped with third impurities of the second conductivity type, wherein the charge collection well occupies the first impurity distribution region and the second impurity distribution region and represents the second conductivity type as a whole.
|
