METHOD OF FORMING FILM OF GROUP III NITRIDE SUCH AS GALLIUM NITRIDE

摘要

[PROBLEMS] To provide a method of forming a film of gallium nitride, in which even at low substrate temperature, there can be attained less carbon contamination and appropriate crystallinity. [MEANS FOR SOLVING PROBLEMS] Simultaneously with introduction of a process gas containing TMG being an organogallium compound, nitrogen (N₂) and hydrogen (H₂) in a space between a pair of electrodes (12H,12E) under a pressure close to atmospheric pressure, an electric field is applied between the electrodes (12H,12E) so as to induce electric discharge. The process gas after the electric discharge is brought into contact with substrate (90). During film formation, the temperature of the substrate is set at 100° to 400°C.