| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transfer mask having excellent transfer accuracy and its manufacturing method. <P>SOLUTION: In a transfer mask manufacturing method, a transfer mask 17 comprises a supporting layer 11 comprising a first silicon layer in a shape which surrounds a membrane forming region and a thin-film layer 13 which is directly formed on the first silicon layer, which covers the membrane forming region, in which a predetermined charge particle line transmission hole is formed on the membrane forming region, and which is formed of a second silicon layer. In the method, a first thin-film layer is selectively formed on the membrane forming region of the front surface of the supporting layer, a second thin-film layer is formed on the front surface of the supporting layer on which the first thin-film layer is selectively formed, the second thin-film layer is ground to a predetermined depth, the supporting layer in the membrane forming region is removed from the rear surface, thereby forming an opening portion 15, the first thin-film layer is removed through the opening portion 15, and the second thin-film layer is removed by use of a predetermined pattern, thereby forming the charge particle line transmission hole. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
