| 摘要 |
PROBLEM TO BE SOLVED: To improve the ESD resistance of an ESD protective transistor included in a semiconductor device. SOLUTION: The semiconductor device includes a gate electrode 103 formed on a well region 101, a drain region 104 and a source region 105 each formed in the direction of the gate length of the gate electrode 103 on the well region 101, a plurality of drain contacts 106A to 106C formed at intervals on the drain region 104 in the direction of the gate width of the gate electrode 103, and a plurality of source contacts 107A to 107E formed at intervals on the source region 105 in the direction of the gate width of the gate electrode 103. Each interval between adjacent drain contacts is larger than each interval between adjacent source contacts. COPYRIGHT: (C)2008,JPO&INPIT
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