| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for obtaining an SiC single crystal ingot having superior quality and a long size. SOLUTION: A silicon carbide single crystal 10 is grown by using a producing apparatus equipped with a plurality of gas introducing pipes 4a to introduce a mixed gas only to the center part 7a in the center part 7a and a periphery part 7b positioning around the center part on the crystal growing surface of a seed crystal 7 and a plurality of gas introducing pipes 4b to introduce the mixed gas only to the periphery part 7b in the center part 7a and the periphery part 7b and by increasing the ratio of the flow rate of a mixed gas flowing in the gas introducing pipes 4a for the center part to the total flow rate of the mixed gas flowing simultaneously in the gas introducing pipes 4a for the center part and gas introducing pipes 4b for the peripheral part along with the increase of the crystal growth of the silicon carbide single crystal 10. COPYRIGHT: (C)2008,JPO&INPIT
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