发明名称 Phase change device with offset contact
摘要 A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
申请公布号 US2008224120(A1) 申请公布日期 2008.09.18
申请号 US20080152330 申请日期 2008.05.14
申请人 OVONYX, INC. 发明人 CZUBATYJ WOLODYMYR;LOWREY TYLER
分类号 H01L45/00 主分类号 H01L45/00
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