发明名称 Plasma enhanced ALD process for copper alloy seed layers
摘要 A method of forming a copper alloy seed layer comprises providing a substrate in a reactor, performing a first ALD process to fabricate an alloy metal layer on the substrate, wherein the first ALD process uses an alloy metal precursor selected from a group of specific alloy metal precursors, performing a second ALD process to fabricate a copper metal layer on the alloy metal layer, wherein the second ALD process uses a copper metal precursor selected from a group of specific copper metal precursors, and annealing the alloy metal layer and the copper metal layer to form a graded Cu-alloy layer.
申请公布号 US2008223287(A1) 申请公布日期 2008.09.18
申请号 US20070724361 申请日期 2007.03.15
申请人 LAVOIE ADRIEN R;DOMINGUEZ JUAN E 发明人 LAVOIE ADRIEN R.;DOMINGUEZ JUAN E.
分类号 C30B23/00 主分类号 C30B23/00
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