发明名称 |
SEMICONDUCTOR DEVICES INCLUDING HYDROGEN IMPLANTATION LAYERS AND METHODS OF FORMING THE SAME |
摘要 |
Provided are semiconductor devices and methods of forming the same. The semiconductor devices include a substrate further including a hydrogen implantation layer and a gate structure formed on the hydrogen implantation layer to include a first insulating layer, a charge storage layer, a second insulating layer and a conductive layer.
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申请公布号 |
US2008224267(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080045803 |
申请日期 |
2008.03.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JAE-HUN;KIM KI-NAM;JUNG SOON-MOON |
分类号 |
H01L29/792;H01L21/30 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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