| 摘要 |
A voltage generating circuit for a semiconductor memory apparatus according includes a data logic voltage generating unit that, when a data output unit outside a semiconductor memory apparatus outputs low-level data, generates an internal data logic voltage at the same potential level as the low-level data in response to an on-die termination signal. In addition, a reference voltage generating circuit for a semiconductor memory apparatus that uses the voltage generating circuit includes a reference voltage generating unit that can be configured to generate a reference voltage at an average potential level between a maximum potential and a minimum potential of input data.
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