| 摘要 |
A method for manufacturing a semiconductor device includes: a) forming a first semiconductor layer on a semiconductor substrate; b) forming a second semiconductor layer on the first semiconductor layer; c) forming a first groove exposing a side of the first semiconductor layer by partially etching the first semiconductor layer and the second semiconductor layer; d) forming a cavity between the semiconductor substrate and the second semiconductor layer by etching the first semiconductor layer through the first groove under an etching condition in which the first semiconductor layer is more easily etched than the second semiconductor layer; e) respectively forming a third semiconductor layer on an upper surface of the semiconductor substrate and a lower surface of the second semiconductor layer that are facing an inside of the cavity while leaving a space in the cavity; and f) thermally oxidizing the third semiconductor layer so as to form a buried oxide film in the cavity.
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