| 摘要 |
<p>A method for correcting a layout is provided to reduce errors in a patterning process on a substrate by reducing critical dimension errors of a mask in a real mask manufacturing process. A design process is performed to design a basic data file. A fragment generation process is performed to generate a fragment by using the basic data file. A die section definition process is performed to define a die section by generating the fragment. In the fragment generation process, a fragmentation generation process for a length equal to or more than a critical dimension of a mask writing tool is performed. The fragmentation generation process includes a process for forming a database of the critical dimension of the mask writing tool, and a process for reflecting the critical dimension thereon.</p> |
