| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a W-Ti diffusion preventing film for preventing the diffusion of Au and Al which is formed between an Au bump for mounting a semiconductor chip to a substrate and an Al electrode, and having high etching rate, and to provide a W-Ti target for sputtering for forming the W-Ti diffusion-preventing film having a high etching rate. <P>SOLUTION: The W-Ti diffusion-preventing film having a high etching rate has a composition comprising: Ti of 5 to 20% by mass; Fe of 25 to 100 ppm, and the balance comprising W and unavoidable impurities. The Ti-W target for sputtering has the same ingredient composition as that of the diffusion preventing film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
