发明名称 LOW NOISE AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To provide a low noise amplifier which continues with its operation by safe power, especially a low noise amplifier suitable for use by high power. SOLUTION: The low noise amplifier is provided with at least one field effect transistor having a source, a drain and a gate, a drain power source and a drain bias input line connecting the drain power source and the drain. The low noise amplifier is further provided with a drain resistor which is arranged on the drain bias input line and whose resistance value is determined so as to prevent application of power equal to or more than power proofness to the drain. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008219507(A) 申请公布日期 2008.09.18
申请号 JP20070054657 申请日期 2007.03.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAGUCHI MAMIKO
分类号 H03F3/189;H03F1/26 主分类号 H03F3/189
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