| 摘要 |
PROBLEM TO BE SOLVED: To improve the machining stability at etching of a substrate or on an upper layer of the substrate. SOLUTION: A SiN film 129 is formed so as to be in contact with the top of an element-forming surface of a silicon substrate 101, and the SiN film is selectively removed to form an opening 115. Then, the element-forming surface of the silicon substrate 101 in which the opening 115 is formed is subjected to plasma processing and deposits 113, attached to the sidewall of the opening 115 in the process of forming the opening 115, are removed, the silicon substrate 101 is selectively removed to form a concave portion by using the SiN film 129 as a mask. COPYRIGHT: (C)2008,JPO&INPIT
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