发明名称 SEMICONDUCTOR SUBSTRATE TEMPERATURE MEASURING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING DEVICE INCLUDING IT, TEMPERATURE MEASURING METHOD FOR SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To measure a temperature of a semiconductor substrate with high accuracy and high reproducibility. SOLUTION: An MBE device 20 acting as a semiconductor device manufacturing device including a semiconductor substrate temperature measuring device is provided with a substrate temperature calculating device 11 which calculates a temperature of a substrate 2 based on a spectrum of scattered light scattered by the substrate 2 in the semiconductor substrate temperature measuring device which measures a temperature of a semiconductor substrate. The substrate temperature calculating device 11 compensates the temperature of the substrate 2 calculated based on the spectrum of the scattered light, based on a dopant concentration of the substrate 2. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008218929(A) 申请公布日期 2008.09.18
申请号 JP20070057868 申请日期 2007.03.07
申请人 SHARP CORP 发明人 SHIMIZU KAZUHISA;UNEYAMA KAZUHIRO;SAKAGAMI HIDEKAZU
分类号 H01L21/203;G01K11/12;G01K15/00;H01L21/205 主分类号 H01L21/203
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