| 摘要 |
PROBLEM TO BE SOLVED: To improve data read accuracy from a reference cell when whether the reference cell is good or not is determined in an nonvolatile memory device provided with the reference cell and a memory cell. SOLUTION: The nonvolatile memory device is provided with a read circuit (self-reference sense circuit 21) of a self-reference sense system used only during test of the reference cell (dummy cell). In the self-reference sense circuit 21, a first value is read from a test object cell before writing of writing data for the dummy cell of the test object, and a second value is read from the test object cell after writing of writing data for the test object cell. The self-reference sense circuit 21 generates read data of the test object cell based on the first and the second values. COPYRIGHT: (C)2008,JPO&INPIT
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