| 摘要 |
PROBLEM TO BE SOLVED: To perform the analysis with high precision at a plurality of places approaching the surface of a sample by preventing the adhesion of primary ions to the peripheral region of the analyzing region on the surface of the sample when secondary ion mass analysis is performed. SOLUTION: Si<SP>+</SP>is subjected to ion implantation as an element in a plurality of stripe like states parallel to each other with respect to the region which surrounds at least a part of the analyzing region irradiated with primary ions on the surface 1a of the sample 1, herein, the surface 1a of the sample 1. Volumetric expansion is produced in the implanted region by the ion implantation and a plurality of stripe-like barrier walls 11 are formed. COPYRIGHT: (C)2008,JPO&INPIT
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