| 摘要 |
The invention relates to a method for manufacturing a structure of electrical interconnections of the damascene type for an integrated circuit, comprising at least one level of interconnections, consisting of electrical conductors arranged on a substrate and separated from one another by air gaps, a layer of electrically isolating material covering the level of interconnections, the method comprising steps consisting of: depositing a layer of sacrificial material on the substrate, etching the layer of sacrificial material with a pattern corresponding to the electrical conductors, depositing, on the etched layer of the layer of sacrificial material, a layer of membrane in material permeable to an attack agent capable of breaking down the sacrificial material, breaking down the sacrificial material by means of the attack agent, which is how the air gaps are formed in place of the broken down sacrificial material, forming electrical conductors in the etched track so as to obtain electrical conductors separated by air gaps, depositing a layer of electrically isolating material so as to cover the level of interconnections obtained.
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