| 摘要 |
<p>Provided are a semiconductor device, which can prevent the short-circuit of a ferroelectric capacitor due to conducting fine particles produced at an etching time, so that it can have excellent characteristics and can be highly integrated, and a method for manufacturing the semiconductor device. Over an insulating film for covering a transistor formed on a semiconductor substrate (110), there are formed a lower electrode film (131), a ferroelectric film (132) and an upper electrode film (133), over which a Pt film (134) is formed as a cap layer. Moreover, a hard mask (a TiN film (135) and a SiO<SUB>2</SUB> film (136)) of a predetermined pattern is formed over the Pt film (134), and the Pt film (134) and the upper electrode film (133) are etched. After this, an insulating protective film (138) is formed all over the surface, and the upper electrode film (133) is covered on its side faces with the insulating protective film (138). Next, the ferroelectric film (132) and the lower electrode film (131) are etched to form the ferroelectric capacitor.</p> |
