发明名称 |
MOS transistors with selectively strained channels |
摘要 |
The channels of first and second CMOS transistors can be selectively stressed. A gate structure of the first transistor includes a stressor that produces stress in the channel of the first transistor. A gate structure of the second transistor is disposed in contact with a layer of material that produces stress in the channel of the second transistor.
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申请公布号 |
US2008224225(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20070717450 |
申请日期 |
2007.03.13 |
申请人 |
KO CHIH-HSIN;LEE WEN-CHIN;KE CHUNG-HU;CHEN HUNG-WEI |
发明人 |
KO CHIH-HSIN;LEE WEN-CHIN;KE CHUNG-HU;CHEN HUNG-WEI |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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