发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM
摘要 A substrate processing apparatus includes: a mounting table to have the substrate placed thereon in a process chamber; a first temperature adjusting mechanism temperature-adjusting the substrate placed on the mounting table; a lifter mechanism lifting up the substrate from the mounting table in the process chamber; and a second temperature adjusting mechanism temperature-adjusting the substrate lifted up from the mounting table by the lifter mechanism, wherein the first temperature adjusting mechanism and the second temperature adjusting mechanism temperature-adjust the substrate to different temperatures respectively.
申请公布号 US2008223399(A1) 申请公布日期 2008.09.18
申请号 US20080047649 申请日期 2008.03.13
申请人 TOKYO ELECTRON LIMITED 发明人 ONISHI TADASHI
分类号 B08B7/00;B08B13/00;H01L21/302;H01L21/67 主分类号 B08B7/00
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