发明名称 CAPACITOR AND METHOD FOR FABRICATING THE SAME
摘要 A capacitor includes a lower electrode, a first dielectric layer formed over the lower electrode, a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material, a third dielectric layer formed over the second dielectric layer, and an upper electrode formed over the third dielectric layer.
申请公布号 US2008224264(A1) 申请公布日期 2008.09.18
申请号 US20070967200 申请日期 2007.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK JONG-BUM
分类号 H01L21/283;H01L29/92 主分类号 H01L21/283
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