| 摘要 |
A semiconductor memory device includes a first resistance change element having a first portion and a second portion, the first portion and the second portion having a first space in a first direction, and a second resistance change element formed to have a distance to the first resistance change element in the first direction, and having a third portion and a fourth portion, the third portion and the fourth portion having a second space in the first direction, and the first space and the second space being shorter than the distance.
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