| 摘要 |
<p>Intended is to provide an oscillator capable of reducing the distortion of an output waveform, and a semiconductor device. The oscillator (30) comprises an N-channel type FET (31) having a drain connected with a positive-pole side power source line, a P-channel type FET (33) having a drain connected with a negative-pole side power source line and a source connected with the source of the FET (31), first and second bias circuits for applying bias voltages to the respective gates of the FETs (31 and 33), a capacitor (35) inserted between the gates of the FETs (31 and 33) and the sources of the FETs (31 and 33), a capacitor (36) inserted between the negative-pole side power source line and the sources of the FETs (31 and 33), and a quartz vibrator (52) having one terminal connected with one terminal of the capacitor (35) corresponding to the gate sides of the FETs (31 and 33). This oscillator (30) has such a symmetric structure across a capacitor (40) as has a constitution similar to the aforementioned constitution on the other side across the capacitor (40).</p> |
