COMBINED TRANSISTOR-CAPACITOR STRUCTURE IN DEEP SUB-MICRON CMOS FOR POWER AMPLIFIERS,申请号KR20017015538-传众专利搜索

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发明名称	COMBINED TRANSISTOR-CAPACITOR STRUCTURE IN DEEP SUB-MICRON CMOS FOR POWER AMPLIFIERS
摘要
申请公布号	KR100859079(B1)	申请公布日期	2008.09.17
申请号	KR20017015538	申请日期	2001.12.03
申请人		发明人
分类号	H01L27/108	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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