发明名称 |
Semiconductor light emitting element |
摘要 |
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121. |
申请公布号 |
EP1970969(A1) |
申请公布日期 |
2008.09.17 |
申请号 |
EP20080012060 |
申请日期 |
2003.05.15 |
申请人 |
PANASONIC CORPORATION |
发明人 |
ISHIBASHI, AKIHIKO;YOKOGAWA, TOSHIYA;OHNAKA, KIYOSHI;KOIKE, SUSUMU |
分类号 |
H01L33/32;H01L21/20;H01L33/00;H01L33/10;H01L33/42;H01L33/46;H01L33/62 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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