| 摘要 |
A thin film transistor and an organic light emitting display device having the same are provided to reduce an operation voltage and to improve light emitting efficiency by applying a P-type zinc compound semiconductor layer to the organic light emitting display device. A thin film transistor(200) includes a substrate(210) and a semiconductor layer(240b), a gate electrode(220), a source electrode(250a), and a drain electrode(250b) which are provided on the substrate. The semiconductor layer is formed by a P-type semiconductor layer by diffusing phosphorous(245) to a zinc oxide semiconductor. The phosphorous is doped on the semiconductor layer at a concentration of 1 x 1014 to 1 x 1018 cm^-3. The semiconductor layer is formed by diffusing the phosphorous to at least one selected from a group consisting of ZnO, ZnGaO, ZnInO, In2O3, ZnInGaO, ZnSnO, and ZnSnO. |
