发明名称 |
Method for measuring epitaxial film thickness of multilayer epitaxial wafer |
摘要 |
In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.
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申请公布号 |
US6025596(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19980019049 |
申请日期 |
1998.02.05 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
SHIRAI, HIROSHI;AKAI, KENJI;ABE, TOSHIO;TOJIMA, CHIKARA;IWATA, KATSUYUKI |
分类号 |
G01B11/06;H01L21/66;H01L29/739;H01L29/78;(IPC1-7):G01J5/02 |
主分类号 |
G01B11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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