发明名称 Thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof
摘要 <p>A thin film transistor includes first and second ohmic contacts formed on a substrate, wherein each of the first and second ohmic contacts includes polycrystalline silicon; a semiconductor formed on the first and second ohmic contacts and the substrate, the semiconductor including microcrystalline silicon; a blocking member formed on the semiconductor; an input electrode formed on the first ohmic contact; an output electrode formed on the second ohmic contact; an insulating layer formed on the blocking member, the input electrode, and the output electrode; and a control electrode formed on the insulating layer and disposed on the semiconductor.</p>
申请公布号 EP1970957(A2) 申请公布日期 2008.09.17
申请号 EP20080002502 申请日期 2008.02.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, KYU-SIK;CHOI, JOON-HOO
分类号 H01L27/12;H01L21/77 主分类号 H01L27/12
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