发明名称 |
Thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof |
摘要 |
<p>A thin film transistor includes first and second ohmic contacts formed on a substrate, wherein each of the first and second ohmic contacts includes polycrystalline silicon; a semiconductor formed on the first and second ohmic contacts and the substrate, the semiconductor including microcrystalline silicon; a blocking member formed on the semiconductor; an input electrode formed on the first ohmic contact; an output electrode formed on the second ohmic contact; an insulating layer formed on the blocking member, the input electrode, and the output electrode; and a control electrode formed on the insulating layer and disposed on the semiconductor.</p> |
申请公布号 |
EP1970957(A2) |
申请公布日期 |
2008.09.17 |
申请号 |
EP20080002502 |
申请日期 |
2008.02.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, KYU-SIK;CHOI, JOON-HOO |
分类号 |
H01L27/12;H01L21/77 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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