| 摘要 |
This invention provides a substrate treatment method that can prevent contamination of a substrate with tungsten. The substrate treatment method comprises a main treatment step of oxidizing a tungsten-containing substrate with an oxygen-containing gas and a cleaning step of removing tungsten oxide with a hydrogen-containing gas. The main treatment step comprises the steps of carrying the metal-containing substrate in a treatment chamber, supplying an oxygen-containing gas into the treatment chamber, supplying, after the supply of the gas, electric power to a high-frequency power supply to generate an oxygen component-containing plasma for treating the substrate, stopping the supply of electric power to the high-frequency power supply, and carrying out the substrate from the treatment chamber. The cleaning step comprises the steps of supplying, after the carrying-out of the substrate, a hydrogen-containing gas to the treatment chamber, supplying, after the supply of the hydrogen-containing gas, electric power to the high-frequency power supply to generate a hydrogen component-containing plasma and to carry out cleaning, and stopping the supply of electric power to the high-frequency power supply.
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