发明名称 |
METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND, SILICON SINGLE CRYSTAL AND SILICON WAFER |
摘要 |
The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, comprising the steps of: providing a seed crystal having a tip end with a sharp-pointed shape or a truncation thereof in which an angle of the tip end is 28 DEG or less; keeping the tip end of the seed crystal at just above a silicon melt to heat it before bringing the tip end of the seed crystal into contact with the silicon melt; bringing the tip end of the seed crystal into contact with the silicon melt and immersing the seed crystal into the silicon melt to a desired diameter; and shifting to pull the single crystal, wherein a temperature variation at a surface of the silicon melt is kept at +/-5 DEG C or less at least for a period from a point of bringing the tip end of the seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of <110>. <IMAGE> |
申请公布号 |
EP1498517(A4) |
申请公布日期 |
2008.09.17 |
申请号 |
EP20030719172 |
申请日期 |
2003.04.23 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
FUSEGAWA, I.;OKUNI,S.;MITAMURA,N.;OHTA, T.;KATUOKA, N. |
分类号 |
C30B29/06;C30B15/00;C30B15/22;C30B15/36 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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