发明名称 |
Semiconductor integrated circuit device |
摘要 |
<p>A semiconductor integrated circuit device (10) is composed of an LSI function unit (11) and a shield wiring layer (22) formed on the unit. The LSI function unit (11) includes a semiconductor substrate (12) and a first insulating film (13), and the semiconductor substrate (12) is formed with a circuit element including, for example, a MOS transistor (14). The shield wiring layer (22) is composed of a lower shield line (23), a third insulating film (24), an upper shield line (25), and a fourth insulating film (26) sequentially stacked above a second insulating film (17). The directions in which the lower and upper shield lines (23) and (25) are arranged intersect each other. <IMAGE></p> |
申请公布号 |
EP1968112(A3) |
申请公布日期 |
2008.09.17 |
申请号 |
EP20080011606 |
申请日期 |
2003.07.14 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ITOH, RIE;MATSUNO, NORIAKI;TSUNODA, MASATO |
分类号 |
H01L21/82;G06F1/04;H01L21/3205;H01L23/498;H01L23/522;H01L23/528;H01L23/538;H01L23/58;H01L27/04 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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