发明名称 |
Plasma processing apparatus and method |
摘要 |
A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.
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申请公布号 |
US6165274(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19980184044 |
申请日期 |
1998.11.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
AKIYAMA, KAZUYOSHI;AOIKE, TATSUYUKI;SHIRASUNA, TOSHIYASU;TAKADA, KAZUHIKO;OKAMURA, RYUJI;MURAYAMA, HITOSHI |
分类号 |
G03G5/08;C23C16/44;C23C16/50;C23C16/509;H01J37/32;H01L21/205;H01L31/04;(IPC1-7):C23C16/00 |
主分类号 |
G03G5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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