发明名称 |
CLEANING METHOD OF A PROCESS CHAMBER |
摘要 |
A cleaning method of a process chamber is provided to suppress the generation of particles by removing the generation of friction due to thermal expansion. A shower head structure is loaded into a process chamber(22) of a layer forming apparatus(20) to perform a layer forming process for depositing reactants on a surface of a heated target in process gas atmosphere. The shower head structure is used for introducing a process gas into the process chamber. When the cleaning gas is introduced from the shower head structure to the process chamber, the temperature of the shower head structure is set at the temperature higher than the temperature of a layer forming process. The temperature of the shower head structure is 130 degrees centigrade or more.
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申请公布号 |
KR20080083241(A) |
申请公布日期 |
2008.09.17 |
申请号 |
KR20080073220 |
申请日期 |
2008.07.25 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KUWADA TOMONAO;YONEDA MASATAKE;NISHIMORI TAKASHI |
分类号 |
H01L21/20;C23C16/44;C23C16/455 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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