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发明名称
影像感测装置、其形成方法及半导体装置
摘要
本发明提供一种影像感测装置,包括:一半导体基底,其具有一第一型导电性;一第一材料层,在该半导体基底上方,该第一材料层具有该第一型导电性;一第二材料层,在该第一材料层上方,该第二材料层具有一第二型导电性,该第二型导电性与该第一型导电性不同;以及复数个画素,在该第二材料层中。
申请公布号
TW200837940
申请公布日期
2008.09.16
申请号
TW096120711
申请日期
2007.06.08
申请人
台湾积体电路制造股份有限公司
发明人
洪志明;杨敦年
分类号
H01L27/146(2006.01)
主分类号
H01L27/146(2006.01)
代理机构
代理人
洪澄文;颜锦顺
主权项
地址
新竹市新竹科学工业园区力行六路8号
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