发明名称 Preparation of halftone phase shift mask blank
摘要 In preparing a halftone phase shift mask blank, a metal and silicon-containing compound film serving as a halftone phase shift film is formed on a transparent substrate by a co-sputtering process including the steps of disposing a metal-containing target and a silicon target in a chamber, feeding sputtering gases into the chamber, and applying electric powers across both the targets at the same time. The sputtered region area of the metal-containing target is smaller than the sputtered region area of the silicon target.
申请公布号 US7425390(B2) 申请公布日期 2008.09.16
申请号 US20050059529 申请日期 2005.02.17
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 YOSHIKAWA HIROKI;OKAZAKI SATOSHI
分类号 G03F1/00;C23C14/00;C23C14/06;C23C14/32;C23C14/34;G03C5/00;G03F1/08;G03F1/32;G03F1/54;G03F1/68;G03F9/00;H01L21/027 主分类号 G03F1/00
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