发明名称 |
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
摘要 |
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.
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申请公布号 |
US7425514(B2) |
申请公布日期 |
2008.09.16 |
申请号 |
US20060430856 |
申请日期 |
2006.05.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YEO JAE-HYUN;KIM YOUNG-SUN;KIM SUNG-TAE;PARK IN-SUNG;IM GI-VIN |
分类号 |
H01L21/31;C23C16/40;C23C16/44;C23C16/455;H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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