发明名称 |
Apparatus, precursors and deposition methods for silicon-containing materials |
摘要 |
A method for making a Si-containing material comprises transporting a pyrolyzed Si-precursor to a substrate and polymerizing the pyrolyzed Si-precursor on the substrate to form a Si-containing film. Polymerization of the pyrolyzed Si-precursor may be carried out in the presence of a porogen to thereby form a porogen-containing Si-containing film. The porogen may be removed from the porogen-containing Si-containing film to thereby form a porous Si-containing film. Preferred porous Si-containing films have low dielectric constants and thus are suitable for various low-k applications such as in microelectronics and microelectromechanical systems.
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申请公布号 |
US7425350(B2) |
申请公布日期 |
2008.09.16 |
申请号 |
US20050117988 |
申请日期 |
2005.04.29 |
申请人 |
ASM JAPAN K.K. |
发明人 |
TODD MICHAEL A. |
分类号 |
B05D3/02;C23C16/40;C23C16/56 |
主分类号 |
B05D3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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