发明名称 |
Complementary giant magneto-resistive memory with full-turn word line |
摘要 |
A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.
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申请公布号 |
US7426133(B2) |
申请公布日期 |
2008.09.16 |
申请号 |
US20050257327 |
申请日期 |
2005.10.24 |
申请人 |
HONEYWELL INTERNATIONAL, INC. |
发明人 |
HYNES OWEN J.;WANG ROY R.;KATTI ROMNEY R.;REED DANIEL S. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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