发明名称 Surface acoustic wave device
摘要 In a surface acoustic wave device, a plurality of grooves are provided on a piezoelectric substrate, an electrode film defining an IDT electrode is formed by filling an electrode material in the grooves, an insulator layer, such as a SiO<SUB>2 </SUB>film, is arranged so as to cover the piezoelectric substrate and the electrode film formed in the grooves, and the surface of the insulator layer is flattened.
申请公布号 US7425788(B2) 申请公布日期 2008.09.16
申请号 US20070627537 申请日期 2007.01.26
申请人 MURATA MANUFACTURING CO., LTD. 发明人 KADOTA MICHIO;KIMURA TETSUYA
分类号 H03H9/145 主分类号 H03H9/145
代理机构 代理人
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