发明名称 |
EEPROM structure with improved data retention utilizing biased metal plate and conductive layer exclusion |
摘要 |
A biased conductive plate is provided over an NVM cell structure to overcome data retention charge loss due to the presence of dielectric films that are conductive at higher temperatures. The biased conductive plate is preferably formed from the lowest metal layer in the fabrication process flow, but any biased conductive layer can be used.
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申请公布号 |
US7425741(B1) |
申请公布日期 |
2008.09.16 |
申请号 |
US20050186442 |
申请日期 |
2005.07.21 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
STRACHAN ANDREW;LAVROVSKAYA NATALIA;DESAI SAURABH;PARSA ROOZBEH;MIRGORODSKI YURI |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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