| 摘要 |
A semiconductor device and a method of fabricating the semiconductor device are described. There is provided the semiconductor device including, a semiconductor substrate, a gate insulating layer on the semiconductor substrate, a two-step gate electrode formed on the gate insulating layer, the two-step gate electrode having a first gate electrode layer formed on the gate insulating layer and a second gate electrode layer formed on the first gate electrode layer, the gate length of the second gate electrode layer being longer than that of the first gate electrode layer, extension regions formed in the semiconductor substrate to interpose a channel region of the semiconductor substrate beneath the second gate electrode layer, and source-drain regions formed in the outside of the extension regions toward the channel region, the source-drain regions adjoining the extension regions.
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