| 摘要 |
A method of manufacturing a thin film transistor array panel includes forming a gate line including a gate electrode, forming a gate insulating layer on the gate line, forming a semiconductor stripe on the gate insulating layer; forming ohmic contacts on the semiconductor stripe, forming a data line including a source electrode and a drain electrode on the ohmic contacts, depositing a passivation layer on the data line and the drain electrode, and forming a pixel electrode connected to the drain electrode. The formation of the data line and the drain electrode, the ohmic contacts, and the semiconductor stripe includes depositing an intrinsic silicon layer, an extrinsic silicon layer, and a conductor layer on the gate insulating layer, forming a photoresist including a second portion corresponding to a channel area between the source electrode and the drain electrode, and a first portion corresponding to a wire area on the data line and the drain electrode, wherein the first portion is thicker than the second portion, etching the conductor layer corresponding to a remaining area except for the wire and the channel area using the photoresist as an etch mask, removing the second portion to expose the conductor layer on the channel areas, etching the intrinsic silicon layer and the extrinsic silicon layer on the remaining area, etching the conductor layer and the extrinsic silicon layer on the channel areas, and removing the first portion. |
