| 摘要 |
An SRAM device is disclosed, which comprises a plurality of rows of SRAM cells and a line-buffer SRAM cell. Each row of SRAM cells is controlled by a word line. The line-buffer SRAM cell is coupled to the rows of SRAM cells and controlled by a read enable line. The signal on the read enable line is activated after the signal on the word line is activated, and part of the activated signal on the read enable line overlaps with the activated signal on the word line. The power provided to the line-buffer SRAM cell is selectively cut off.
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