Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors
摘要
A method for fabricating a three-dimensional transistor is described. Atomic Layer Deposition of nickel, in one embodiment, is used to form a uniform silicide on all epitaxially grown source and drain regions, including those facing downwardly.
申请公布号
US7425500(B2)
申请公布日期
2008.09.16
申请号
US20060395940
申请日期
2006.03.31
申请人
INTEL CORPORATION
发明人
METZ MATTHEW V.;DATTA SUMAN;DOCZY MARK L.;KAVALIEROS JACK T.;BRASK JUSTIN K.;CHAU ROBERT S.