发明名称 |
Methods for manufacturing shallow trench isolation layers of semiconductor devices |
摘要 |
A method for forming a shallow trench isolation layer that includes: forming a pad oxide on a substrate; forming a hard mask silicon nitride on the pad oxide; forming a moat pattern on the pad oxide and hard mask; etching partially the pad oxide and hard mask with the moat pattern to open the silicon nitride; and ashing process for removing the moat pattern.
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申请公布号 |
US7425511(B2) |
申请公布日期 |
2008.09.16 |
申请号 |
US20050194265 |
申请日期 |
2005.08.01 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
JO BO YEOUN |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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